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| SST112 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix SST112 This n-channel JFET is optimised for low noise high performance switching. The part is particularly suitable for use in low noise audio amplifiers. The SOT-23 package is well suited for cost sensitive applications and mass production. (See Packaging Information). FEATURES DIRECTREPLACEMENTFORSILICONIXSST112 LOWGATELEAKAGECURRENT 5pA FASTSWITCHING t(on)4ns ABSOLUTEMAXIMUMRATINGS@25C(unlessotherwisenoted) MaximumTemperatures StorageTemperature 55Cto+150C SST112 Benefits: OperatingJunctionTemperature 55Cto+135C Short Sample & Hold Aperture Time MaximumPowerDissipation Low insertion loss ContinuousPowerDissipation 350mW Low Noise MAXIMUMCURRENT SST112 Applications: GateCurrent(Note1) 50mA Analog Switches MAXIMUMVOLTAGES Commutators GatetoDrainVoltage VGDS=35V Choppers GatetoSourceVoltage VGSS=35V SST112ELECTRICALCHARACTERISTICS@25C(unlessotherwisenoted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS BVGSS GatetoSourceBreakdownVoltage 35 IG=1A,VDS=0V VGS(off) GatetoSourceCutoffVoltage 1 5 VDS=5V,ID=1A V VGS(F) GatetoSourceForwardVoltage 0.7 IG=1mA,VDS=0V IDSS DraintoSourceSaturationCurrent(Note2) 5 mA VDS=15V,VGS=0V IGSS GateReverseCurrent 0.005 1 nA VGS=15V,VDS=0V IG GateOperatingCurrent 0.5 pA VDG=15V,ID=10mA ID(off) DrainCutoffCurrent 0.005 1 nA VDS=5V,VGS=10V rDS(on) DraintoSourceOnResistance 50 IG=1mA,VDS=0V SST112DYNAMICELECTRICALCHARACTERISTICS@25C(unlessotherwisenoted) SYMBOL CHARACTERISTIC MIN TYP. MAX UNITS CONDITIONS gfs ForwardTransconductance 6 mS VDS=20V,ID=1mA,f=1kHz gos OutputConductance 25 S rDS(on) DraintoSourceOnResistance 50 VGS=0V,ID=0mA,f=1kHz Ciss InputCapacitance 7 12 pF VDS=0V,VGS=10V,f=1MHz Crss ReverseTransferCapacitance 3 5 en EquivalentNoiseVoltage 3 nV/Hz VDG=10V,ID=1mA,f=1kHz SST112SWITCHINGCHARACTERISTICS@25C(unlessotherwisenoted) SYMBOL CHARACTERISTIC UNITS CONDITIONS Click To Buy TurnOnTime TurnOnRiseTime TurnOffTime TurnOffFallTime 2 2 6 15 ns VDD=10V VGS(H)=0V SeeSwitchingCircuit Available Packages: SST112 in SOT-23 SST112 in bare die. Please contact Micross for full package and die dimensions SOT-23 (Top View) td(on) tr td(off) tf Note1AbsolutemaximumratingsarelimitingvaluesabovewhichSST112 serviceabilitymaybeimpaired.Note2- Pulsetest:PW300s,DutyCycle3% SST112SWITCHINGCIRCUITPARAMETERS 7V RL 1600 ID(on) 6mA Micross Components Europe VGS(L) SWITCHINGTESTCIRCUIT Tel: +44 1603 788967 Email: www..com chipcomponents@micross.com Web: http://www.micross.com/distribution Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. |
Price & Availability of SST112
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